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<p/><br></br><p><b> Book Synopsis </b></p></br></br>The study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. <p/>Since the publication of the original volume in 1994, there has been a steady flow of new ideas, new understanding, new Silicon-Germanium (SiGe) structures and new devices with enhanced performance. Written for both students and senior researchers, the 2nd edition of Silicon-Germanium Strained Layers and Heterostructures provides an essential up-date of this important topic, describing in particular the recent developments in technology and modelling.

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