Ferroelectricity in Doped Hafnium Oxide - (Woodhead Publishing Electronic and Optical Materials) (Paperback)
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<p/><br></br><p><b> Book Synopsis </b></p></br></br><p><i>Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices</i> covers all aspects relating to the structural and electrical properties of HfO<sub>2</sub> and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO<sub>2</sub>-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO<sub>2</sub> processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. </p> <p>Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO<sub>2</sub> and standard ferroelectric materials. Finally, HfO<sub>2</sub> based devices are summarized.</p>
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